a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c none symbol test conditions minimum typical maxim units v r i r = 10 a 120 v v f i f = 1 ma 1.0 v i r v r = 100 v 100 a c t v r = 4 v f = 1.0 mhz 36 38 40 pf ? ? ? ? c t c t0 / c t120 f = 1.0 mhz 10.0 --- q v r = 4 v f = 50 mhz 300 --- r s i f = 10 ma f = 2400 mhz 0.9 ? ? ? ? silicon abrupt varactor diode AT12020-21 description: the AT12020-21 is designed for high performance rf and microwave applications requiring an abrupt variable capacitance characteristic. features include: ? high tuning ratio, ? ? ? ? c t = 10 min. ? high quality factor, q = 300 min. ? hermetic package, c p = .20 pf l s = .42 nh maximum ratings i f 200 ma v r 120 v p diss 1.75w @ t c 25 o c t j -55 o c to +150 o c t stg -55 o c to +150 o c jc 70 o c/w package style 21
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